IRFS3004TRLPBF
MOSFET N-CH 40V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS3004TRLPBF is a high-performance N-Channel power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain current (Id) of 195A at 25°C, with a maximum power dissipation of 380W (Tc). The low on-resistance (Rds On) of 1.75mOhm at 195A and 10V drive voltage, coupled with a gate charge (Qg) of 240 nC at 10V, ensures efficient switching. It is housed in a surface mount D2PAK (TO-263-3) package, suitable for automated assembly. The operating temperature range is -55°C to 175°C. This component is commonly utilized in power management, electric vehicle systems, and industrial power supplies.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.75mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 25 V |
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