IRFS3004-7PPBF
MOSFET N-CH 40V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS3004-7PPBF is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a 40V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 240A at 25°C (Tc), with a maximum continuous power dissipation of 380W (Tc). The low on-resistance (Rds On) of 1.25mOhm at 195A and 10V gate drive voltage ensures efficient operation. Key parameters include a gate charge (Qg) of 240 nC at 10V and input capacitance (Ciss) of 9130 pF at 25V. The device is packaged in a TO-263-7, D2PAK (6 Leads + Tab) surface-mount configuration, suitable for operation across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power control, and high-power switching supply applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9130 pF @ 25 V |
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