IRFS23N20DTRRP
MOSFET N-CH 200V 24A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS23N20DTRRP is an N-Channel power MOSFET designed for high-efficiency applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 24A at 25°C (Tc). The Rds(On) is specified at a maximum of 100mOhm when driven at 14A and 10V Vgs. Key electrical parameters include a maximum Gate Charge (Qg) of 86 nC at 10V Vgs and an input capacitance (Ciss) of 1960 pF at 25V Vds. The component is housed in a TO-263-3, D2PAK package suitable for surface mounting and is supplied on a Tape & Reel (TR). Power dissipation capabilities are rated at 3.8W (Ta) and 170W (Tc). This MOSFET is utilized in various industrial sectors including power supplies, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 25 V |
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