IRFS23N20DTRLP
MOSFET N-CH 200V 24A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS23N20DTRLP is a 200V N-Channel Power MOSFET with a continuous drain current rating of 24A (Tc). This surface mount device, packaged in a TO-263-3 D2PAK, features a maximum Rds(on) of 100mOhm at 14A and 10V Vgs. Key electrical parameters include a gate charge (Qg) of 86 nC (max) at 10V and input capacitance (Ciss) of 1960 pF (max) at 25V. The MOSFET operates across a temperature range of -55°C to 175°C (TJ). With a power dissipation of 170W (Tc), this component is suitable for applications in industrial power supplies, automotive systems, and high-power switching designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 25 V |