IRFS23N20DPBF
MOSFET N-CH 200V 24A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS23N20DPBF is a 200 V N-channel power MOSFET designed for demanding applications. This device features a continuous drain current capability of 24 A at 25°C (Tc) and a very low on-resistance of 100 mOhm maximum at 14 A and 10 V Vgs. The IRFS23N20DPBF offers a gate charge (Qg) of 86 nC (max) at 10 V Vgs and an input capacitance (Ciss) of 1960 pF (max) at 25 V Vds. With a maximum power dissipation of 170 W (Tc), it is suitable for power supply designs, motor control, and industrial applications. The component is provided in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management and board space optimization. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 25 V |
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