IRFS17N20DTRRP
MOSFET N-CH 200V 16A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRFS17N20DTRRP is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 200V drain-source breakdown voltage and a continuous drain current capability of 16A at 25°C (Tc). With a maximum on-resistance of 170mOhm at 9.8A and 10V Vgs, it offers low conduction losses. The MOSFET is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 50 nC at 10V and an input capacitance (Ciss) of 1100 pF at 25V. Power dissipation is rated at 3.8W (Ta) and 140W (Tc). This component is utilized in industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 9.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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