IRFS17N20DTRLP
MOSFET N-CH 200V 16A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS17N20DTRLP is a 200V N-Channel power MOSFET in a D2PAK surface mount package. This component features a continuous drain current capability of 16A at 25°C (Tc) and a low on-resistance of 170mOhm maximum at 9.8A and 10V gate drive. The device offers a maximum power dissipation of 140W (Tc) and 3.8W (Ta), with a junction temperature range of -55°C to 175°C. Key electrical parameters include a gate charge of 50 nC typical at 10V and input capacitance of 1100 pF maximum at 25V. This MOSFET is suitable for applications in power supply, motor control, and industrial automation. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 9.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |