IRFS17N20DTRL
MOSFET N-CH 200V 16A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS17N20DTRL is an N-Channel Power MOSFET designed for demanding applications. This surface mount component features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 16 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 170 mOhm maximum at 9.8 A and 10 V gate drive. With a gate charge (Qg) of 50 nC maximum at 10 V and input capacitance (Ciss) of 1100 pF maximum at 25 V, it is suitable for efficient switching. The power dissipation is rated at 3.8 W (Ta) and 140 W (Tc). Packaged in a TO-263-3, D2PAK, this component is utilized in industries such as industrial power supplies and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 9.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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