IRFR9N20DPBF
MOSFET N-CH 200V 9.4A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFR9N20DPBF, is engineered for high-performance switching applications. This TO-252AA (DPAK) packaged device features a 200V drain-source breakdown voltage (Vds) and a continuous drain current (Id) of 9.4A at 25°C (Tc). The MOSFET exhibits a maximum on-resistance (Rds On) of 380mOhm at 5.6A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 27 nC at 10V and input capacitance (Ciss) of 560 pF at 25V, this component is suitable for demanding power conversion circuits. Its robust design supports a maximum power dissipation of 86W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). The IRFR9N20DPBF is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 25 V |
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