IRFR9120NTRR
MOSFET P-CH 100V 6.6A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR9120NTRR is a P-Channel MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 6.6A at 25°C, with a maximum power dissipation of 40W (Tc). The device features a low Rds On of 480mOhm at 3.9A and 10V, and a gate charge of 27 nC at 10V. Its input capacitance (Ciss) is rated at 350 pF at 25V. The IRFR9120NTRR is housed in a TO-252AA (DPAK) surface mount package, suitable for high-density board designs. This MOSFET is commonly utilized in power management solutions, industrial automation, and automotive electronics. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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