IRFR9120NCPBF
MOSFET P-CH 100V 6.6A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR9120NCPBF is a P-channel, 100V enhancement mode power MOSFET. It offers a continuous drain current of 6.6A at 25°C (Ta) and a maximum Rds(on) of 480mOhm at 3.9A, 10V. The device features a gate charge of 27 nC (max) at 10V and an input capacitance of 350 pF (max) at 25V. Designed for surface mounting within a TO-252AA (DPAK) package, it operates across a temperature range of -55°C to 150°C. This component is suitable for applications in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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