IRFR9024NTRRPBF
MOSFET P-CH 55V 11A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR9024NTRRPBF is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) capability of 11 A at 25°C (Tc). With a maximum Rds(On) of 175mOhm at 6.6A and 10V, it offers efficient power handling. The device is packaged in a TO-252AA (DPAK) surface mount package, suitable for automated assembly. Key electrical characteristics include a gate charge (Qg) of 19 nC (max) at 10V and an input capacitance (Ciss) of 350 pF (max) at 25V. This robust MOSFET operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 38W (Tc). It finds application in power management systems, automotive electronics, and industrial control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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