IRFR9024NTRL
MOSFET P-CH 55V 11A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRFR9024NTRL, offers a 55V Drain-Source voltage (Vdss) and a continuous drain current of 11A (Tc). This device features a low on-resistance (Rds On) of 175mOhm maximum at 6.6A and 10V Vgs, with a gate charge (Qg) of 19 nC maximum at 10V. Designed for surface mounting in a TO-252AA (DPAK) package, it provides a maximum power dissipation of 38W (Tc) and operates across a junction temperature range of -55°C to 150°C. Ideal for applications in industrial power control, automotive systems, and consumer electronics, this MOSFET utilizes advanced MOSFET technology.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |