IRFR9014N
MOSFET P-CH 60V 5.1A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRFR9014N, offers a 60 V drain-source voltage with a continuous drain current of 5.1 A at 25°C (Tc). This device features a low on-resistance (Rds On) of 500 mOhm maximum at 3.1 A and 10 V Vgs. Designed for surface mount applications, it is housed in a TO-252AA (DPAK) package. Key parameters include a gate charge (Qg) of 12 nC and input capacitance (Ciss) of 270 pF, both specified at 10 V and 25 V respectively. Power dissipation capabilities are 2.5 W (Ta) and 25 W (Tc). The IRFR9014N is suitable for power management applications across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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