IRFR8314TRPBF
MOSFET N-CH 30V 90A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR8314TRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage and a continuous drain current capability of 90A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The low on-resistance is rated at a maximum of 2.2mOhm at 90A and 10V gate drive. Optimized for surface mounting, it is supplied in a TO-252AA (DPAK) package, delivered on tape and reel. Key electrical characteristics include a gate charge (Qg) of 54 nC at 4.5V and input capacitance (Ciss) of 4945 pF at 15V. The operating temperature range is -55°C to 175°C (TJ). This device is suitable for use in automotive, industrial power, and high-power switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4945 pF @ 15 V |
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