IRFR825TRPBF
MOSFET N-CH 500V 6A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR825TRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 6 A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 1.3 Ohm at 3.7 A and 10 V Vgs, and a total Gate Charge (Qg) of 34 nC, it offers optimized performance for power conversion topologies. The MOSFET is packaged in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly processes. Its high Power Dissipation of 119 W (Tc) and operating temperature range of -55°C to 150°C (TJ) make it robust for demanding environments in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 119W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1346 pF @ 25 V |
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