IRFR812TRPBF
MOSFET N-CH 500V 3.6A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR812TRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 3.6 A at 25°C (Tc). With a maximum Power Dissipation (Pd) of 78 W (Tc) and a low on-resistance (Rds On) of 2.2 Ohms at 2.2 A and 10 V gate drive, it ensures efficient power transfer. The DPAK (TO-252AA) surface mount package facilitates integration into compact designs. Key electrical characteristics include a gate charge (Qg) of 20 nC at 10 V and input capacitance (Ciss) of 810 pF at 25 V. Operating across a temperature range of -55°C to 150°C (TJ) and supporting a gate-source voltage (Vgs) up to ±20V, this MOSFET is suitable for use in industrial power supplies, motor control, and lighting systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |
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