IRFR7746TRPBF
MOSFET N-CH 75V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IRFR7746TRPBF is an N-Channel HEXFET® Power MOSFET designed for high-efficiency power conversion applications. This device features a 75V drain-source breakdown voltage and a continuous drain current capability of 56A at 25°C (Tc), with a maximum power dissipation of 99W (Tc). The low on-resistance of 11.2mOhm at 35A and 10V gate drive voltage minimizes conduction losses. It offers a gate charge of 89 nC at 10V and input capacitance of 3107 pF at 25V. Operating across a wide temperature range of -55°C to 175°C, it is housed in a compact PG-TO252-3 (DPAK) surface-mount package, supplied on tape and reel. This component is commonly utilized in automotive power management, industrial motor control, and server power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 99W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3107 pF @ 25 V |
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