IRFR7746PBF
MOSFET N-CH 75V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR7746PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) of 56 A at 25°C (Tc), with a maximum power dissipation of 99 W (Tc). The device exhibits a low on-resistance (Rds On) of 11.2 mOhm at 35 A and 10 V Vgs, coupled with a gate charge (Qg) of 89 nC maximum at 10 V. Input capacitance (Ciss) is rated at 3107 pF maximum at 25 V Vds. The IRFR7746PBF utilizes TO-252AA (DPAK) surface mount packaging, suitable for automated assembly. It operates within a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive, industrial, and power supply applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 99W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3107 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
