IRFR7740TRPBF
MOSFET N-CH 75V 87A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies HEXFET® IRFR7780TRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 87A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The device exhibits a low on-resistance (Rds On) of 7.2mOhm at 52A and 10V (Vgs), facilitated by its advanced MOSFET technology. Key parameters include a Gate Charge (Qg) of 126 nC at 10V (Vgs) and an Input Capacitance (Ciss) of 4430 pF at 25V (Vds). Packaged in a TO-252-3, DPAK (SC-63) surface mount configuration and supplied on tape and reel, this MOSFET operates across a wide temperature range of -55°C to 175°C (TJ). It is well-suited for applications in automotive, industrial power control, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 52A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4430 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
