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IRFR7540PBF

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IRFR7540PBF

MOSFET N-CH 60V 90A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies StrongIRFET™ IRFR7540PBF is an N-channel power MOSFET designed for demanding applications. This component features a 60V drain-source voltage and a continuous drain current capability of 90A at 25°C (with a case temperature). The low on-resistance of 4.8mOhm maximum at 66A and 10V drive voltage, coupled with a high power dissipation of 140W at 25°C (Tc), makes it suitable for high-current switching. Key parameters include a gate charge (Qg) of 130nC at 10V and input capacitance (Ciss) of 4360pF at 25V. The device operates across a temperature range of -55°C to 175°C (TJ). Packaged in a TO-252AA (DPAK) surface-mount configuration, the IRFR7540PBF is commonly utilized in automotive, industrial power control, and high-power switching supplies.

Additional Information

Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs4.8mOhm @ 66A, 10V
FET Feature-
Power Dissipation (Max)140W (Tc)
Vgs(th) (Max) @ Id3.7V @ 100µA
Supplier Device PackageTO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4360 pF @ 25 V

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