IRFR7446PBF
MOSFET N-CH 40V 56A TO252Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET®, StrongIRFET™ series MOSFET, part number IRFR7446PBF, is an N-Channel power MOSFET designed for demanding applications. This device features a 40V Drain-to-Source voltage (Vdss) and a continuous drain current capability of 56A at 25°C (Tc), with a maximum power dissipation of 98W (Tc). The low on-resistance of 3.9mOhm at 56A and 10V (Vgs) is achieved through advanced MOSFET technology. It offers a gate charge (Qg) of 130 nC maximum at 10V and input capacitance (Ciss) of 3150 pF maximum at 25V. The IRFR7446PBF is packaged in a TO-252AA (DPAK) surface-mount case, suitable for operation across a wide temperature range from -55°C to 175°C (TJ). This component finds application in power management, industrial automation, and automotive systems.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 98W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 25 V |
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