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IRFR7440TRPBF

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IRFR7440TRPBF

MOSFET N-CH 40V 90A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRFR7440TRPBF is a 40V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a low Rds(on) of 2.4mOhm at 90A and 10V Vgs, enabling minimal conduction losses. With a continuous drain current capability of 90A (Tc) and maximum power dissipation of 140W (Tc), it is suitable for demanding power management tasks. The device offers a gate charge (Qg) of 134 nC (Max) at 10V Vgs and an input capacitance (Ciss) of 4610 pF (Max) at 25V Vds. Mounted in a TO-252-3, DPAK package, the IRFR7440TRPBF is supplied on tape and reel. Its operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in automotive, industrial, and computing power supply designs.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs2.4mOhm @ 90A, 10V
FET Feature-
Power Dissipation (Max)140W (Tc)
Vgs(th) (Max) @ Id3.9V @ 100µA
Supplier Device PackagePG-TO252-3
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4610 pF @ 25 V

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