IRFR7440PBF
MOSFET N CH 40V 90A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFR7440PBF, is designed for high-efficiency power switching applications. This device features a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 90A at 25°C (Tc). The IRFR7440PBF offers a low on-resistance (Rds On) of 2.4mOhm at 90A and 10V Vgs, contributing to reduced conduction losses. It supports gate drive voltages from 6V to 10V for optimal performance. Key parameters include a gate charge (Qg) of 134 nC and input capacitance (Ciss) of 4610 pF. The MOSFET operates within a temperature range of -55°C to 175°C (TJ) and is packaged in a TO-252AA (DPAK) surface-mount configuration, suitable for demanding thermal management. This component is widely utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 134 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4610 pF @ 25 V |
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