IRFR6215TRRPBF
MOSFET P-CH 150V 13A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRFR6215TRRPBF, offers a Drain-Source Voltage (Vdss) of 150V. This surface mount device, packaged in a TO-252AA (DPAK), provides a continuous drain current (Id) of 13A at 25°C with a maximum power dissipation (Pd) of 110W (Tc). The Rds On is specified at 295mOhm maximum at 6.6A, 10V. Key electrical characteristics include an input capacitance (Ciss) of 860pF at 25V and a gate charge (Qg) of 66nC at 10V. The operating temperature range is -55°C to 175°C. This component is often utilized in industrial automation, power supply, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 295mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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