IRFR6215TRL
MOSFET P-CH 150V 13A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-channel power MOSFET, part number IRFR6215TRL, features a Drain-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 13A (Tc) at 25°C. This device offers a maximum power dissipation of 110W (Tc) and a low on-resistance (Rds On) of 295mOhm at 6.6A, 10V. The gate charge (Qg) is 66 nC at 10V, with input capacitance (Ciss) at 860 pF @ 25V. The IRFR6215TRL utilizes MOSFET technology and is packaged in a TO-252AA (DPAK) surface mount package, supplied on tape and reel. Operating temperature range is -55°C to 175°C. This component is suitable for applications in industrial automation and power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 295mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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