IRFR6215CPBF
MOSFET P-CH 150V 13A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRFR6215CPBF. This device features a Drain-to-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 13 A at 25°C. The device offers a maximum power dissipation of 110 W (Tc) and a low On-Resistance (Rds On) of 295 mOhm at 6.6 A and 10 V gate drive. With a gate charge (Qg) of 66 nC maximum at 10 V and input capacitance (Ciss) of 860 pF maximum at 25 V, it is suitable for diverse applications including automotive power management, industrial motor control, and power supplies. The IRFR6215CPBF is supplied in a TO-252AA (DPAK) surface mount package.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 295mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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