IRFR5505TRR
MOSFET P-CH 55V 18A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR5505TRR is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage (Vdss) of 55 V and a continuous drain current (Id) capability of 18 A at 25°C (Tc). With a low on-resistance (Rds On) of 110 mOhm maximum at 9.6 A and 10 V gate drive, it minimizes conduction losses. The device offers a maximum power dissipation of 57 W (Tc) and a gate charge (Qg) of 32 nC at 10 V. Housed in a TO-252AA (DPAK) surface-mount package, it is supplied on Tape & Reel (TR). Key parameters include an input capacitance (Ciss) of 650 pF at 25 V and a threshold voltage (Vgs(th)) of 4 V at 250 µA. This MOSFET is suitable for use in automotive, industrial, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 9.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
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