IRFR5505
MOSFET P-CH 55V 18A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR5505 is a P-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C. It exhibits a maximum on-resistance (Rds On) of 110mOhm at 9.6A and 10V gate-source voltage. With a maximum power dissipation of 57W (Tc), the IRFR5505 is suitable for power management solutions in automotive and industrial sectors. Key parameters include a gate charge (Qg) of 32nC at 10V and an input capacitance (Ciss) of 650pF at 25V. The device is housed in a TO-252AA (DPAK) surface mount package, facilitating efficient thermal management. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 9.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
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