IRFR5410PBF
MOSFET P-CH 100V 13A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRFR5410PBF, is a surface-mount device designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current capability of 13 A at 25°C. The Rds On is specified at a maximum of 205 mOhm at 7.8 A and 10 V gate drive. With a maximum power dissipation of 66 W (Tc), it is suitable for use in power supplies, automotive electronics, and industrial motor control systems. The TO-252AA (DPAK) package provides efficient thermal management for demanding environments. Key parameters include a gate charge (Qg) of 58 nC at 10 V and input capacitance (Ciss) of 760 pF at 25 V. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
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