IRFR540ZTRPBF
MOSFET N-CH 100V 35A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR540ZTRPBF is a 100V N-Channel Power MOSFET featuring low on-resistance of 28.5mOhm typical at 21A and 10V Vgs. This surface mount component, packaged in a TO-252AA (DPAK), offers a continuous drain current capability of 35A (Tc) and a maximum power dissipation of 91W (Tc). With a gate charge of 59 nC at 10V and input capacitance of 1690 pF at 25V, it is suitable for high-efficiency switching applications. The operating temperature range is -55°C to 175°C. This device is commonly utilized in power supply units, automotive electronics, and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 91W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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