IRFR540ZPBF
MOSFET N-CH 100V 35A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies HEXFET® IRFR540ZPBF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 35A at 25°C (Tc). With a low on-resistance (Rds On) of 28.5mOhm at 21A and 10V, it minimizes conduction losses. The device offers a gate charge (Qg) of 59 nC at 10V and an input capacitance (Ciss) of 1690 pF at 25V. It is packaged in a TO-252AA (DPAK) surface-mount case, enabling high-density board designs. The maximum power dissipation is 91W (Tc). This MOSFET is suitable for use in automotive, industrial, and power supply applications. It operates within an ambient temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 91W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
