IRFR5305TRRPBF
MOSFET P-CH 55V 31A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRFR5305TRRPBF, offers a 55V drain-source breakdown voltage and a continuous drain current of 31A at 25°C (Tc). This device features a maximum on-resistance of 65mOhm at 16A and 10V Vgs. With a gate charge of 63nC at 10V and input capacitance of 1200pF at 25V, it is designed for efficient switching. The component is housed in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. It supports a maximum power dissipation of 110W (Tc) and a gate-source voltage range of ±20V. Applications include power management and switching circuits within industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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