IRFR5305TRR
MOSFET P-CH 55V 31A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR5305TRR is a P-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 31A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The low on-resistance (Rds On) is specified at 65mOhm maximum at 16A and 10V Vgs.
The IRFR5305TRR is packaged in a TO-252AA (DPAK) surface mount configuration, supplied on tape and reel (TR). Key electrical parameters include a gate charge (Qg) of 63 nC maximum at 10V Vgs and an input capacitance (Ciss) of 1200 pF maximum at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for power management solutions across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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