IRFR48ZTRLPBF
MOSFET N-CH 55V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® series IRFR48ZTRLPBF is a high-performance N-Channel power MOSFET designed for demanding applications. This component offers a 55V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 42A at 25°C (Tc), with a maximum power dissipation of 91W (Tc). Featuring low on-resistance (Rds On) of 11mOhm at 37A and 10V (Vgs), this MOSFET ensures efficient power transfer. The gate charge (Qg) is specified at 60 nC maximum at 10V Vgs, and input capacitance (Ciss) is 1720 pF maximum at 25V Vds. Engineered for surface mounting, it comes in a TO-252AA (DPAK) package, supplied in tape and reel. This device is suitable for use in automotive, industrial, and power supply applications requiring robust switching performance. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 91W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 25 V |
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