IRFR4510TRPBF
MOSFET N CH 100V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR4510TRPBF is an N-channel power MOSFET featuring a 100V drain-source breakdown voltage and a continuous drain current capability of 56A at 25°C (Tc). This device exhibits a low on-resistance of 13.9mOhm maximum at 38A and 10V Vgs. With a maximum power dissipation of 143W (Tc), it is suitable for demanding applications. The IRFR4510TRPBF is supplied in the TO-252AA (DPAK) surface-mount package, on tape and reel. Key parameters include a gate charge of 81nC (max) at 10V Vgs and an input capacitance of 3031pF (max) at 50V Vds. This component finds application in power supply designs, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3031 pF @ 50 V |
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