IRFR4510PBF
MOSFET N CH 100V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR4510PBF is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 56A at 25°C (Tc), this component offers robust performance. With a low on-resistance (Rds On) of 13.9mOhm at 38A and 10V Vgs, it minimizes conduction losses. The device boasts a maximum power dissipation of 143W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a Gate Charge (Qg) of 81 nC at 10V and an Input Capacitance (Ciss) of 3031 pF at 50V. Packaged in a TO-252AA (DPAK) surface mount configuration, it is suitable for high-power switching and motor control applications across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3031 pF @ 50 V |
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