IRFR4105ZTRPBF
MOSFET N-CH 55V 30A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR4105ZTRPBF is a N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 30A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 24.5mOhm maximum at 18A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 48W (Tc), it is suitable for applications requiring efficient power handling. The TO-252AA (DPAK) surface mount package facilitates compact board designs, and the Tape & Reel (TR) packaging ensures suitability for automated assembly. Key parameters include a typical gate charge (Qg) of 27 nC at 10V and input capacitance (Ciss) of 740 pF at 25V. This MOSFET is commonly utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 24.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |
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