IRFR4105ZTRL
MOSFET N-CH 55V 30A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR4105ZTRL is a N-Channel power MOSFET with a Drain-Source Voltage (Vdss) of 55 V. It offers a continuous drain current of 30 A (Tc) and a maximum power dissipation of 48 W (Tc). The Rds On (Max) is specified at 24.5 mOhm at 18 A and 10 V gate-source voltage. This device features a low gate charge of 27 nC (Max) at 10 V and an input capacitance of 740 pF (Max) at 25 V. The TO-252AA (DPAK) package is suitable for surface mounting. Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial power management applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 24.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |
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