IRFR4105ZTR
MOSFET N-CH 55V 30A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR4105ZTR is a surface-mount N-Channel power MOSFET in a TO-252AA (DPAK) package. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 30A at 25°C (Tc). The Rds(on) is specified at a maximum of 24.5mOhm at 18A and 10V gate drive. With a maximum power dissipation of 48W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 27 nC and input capacitance (Ciss) of 740 pF at 25V. Operating temperature ranges from -55°C to 175°C. This device is commonly utilized in power supply units, motor control, and automotive applications. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 24.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |
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