IRFR4105Z
MOSFET N-CH 55V 30A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR4105Z is an N-Channel Power MOSFET designed for demanding applications. This device features a 55V drain-to-source breakdown voltage and a continuous drain current rating of 30A at 25°C (Tc). The low on-resistance of 24.5mOhm maximum at 18A and 10V gate drive voltage, combined with a low gate charge of 27 nC maximum at 10V, ensures efficient switching performance. With a maximum power dissipation of 48W (Tc), it is suitable for high-power density designs. The MOSFET utilizes advanced HEXFET® technology and is packaged in a TO-252AA (DPAK) surface-mount package, facilitating integration into compact board layouts. Key parameters include an input capacitance (Ciss) of 740 pF maximum at 25V and a threshold voltage (Vgs(th)) of 4V maximum at 250µA. This component finds application in power management, automotive systems, and industrial automation. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 24.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |
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