IRFR4105TRR
MOSFET N-CH 55V 27A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR4105TRR is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source breakdown voltage of 55V and a continuous drain current capability of 27A (Tc) at 25°C. With a low on-resistance (Rds On) of 45mOhm maximum at 16A and 10V gate drive, it minimizes conduction losses. The device is packaged in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Key parameters include a gate charge of 34 nC typical at 10V and an input capacitance of 700 pF maximum at 25V. Its robust construction allows for a maximum power dissipation of 68W (Tc) and operation across a temperature range of -55°C to 175°C. This MOSFET is frequently utilized in power management, automotive electronics, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
