IRFR4105TRLPBF
MOSFET N-CH 55V 27A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR4105TRLPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 27A at 25°C (Tc). The low on-resistance (Rds On) of 45mOhm at 16A and 10V drive voltage minimizes conduction losses. With a maximum power dissipation of 68W (Tc), it is suitable for power management solutions. The device is packaged in a TO-252AA (DPAK) surface mount package for efficient thermal performance. Key electrical characteristics include a gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 700 pF at 25V. This MOSFET is utilized in industries such as automotive, industrial automation, and consumer electronics for power switching and control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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