IRFR4104TRRPBF
MOSFET N-CH 40V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR4104TRRPBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 42A at 25°C (Tc). With a low on-resistance of 5.5mOhm at 10V gate-source voltage and 42A drain current, it minimizes conduction losses. The device offers a maximum power dissipation of 140W (Tc) and operates across a wide temperature range from -55°C to 175°C. Its TO-252AA (DPAK) surface-mount package provides efficient thermal management. Key electrical characteristics include a gate charge of 89nC (max) at 10V Vgs and an input capacitance of 2950pF (max) at 25V Vds. This MOSFET is suitable for use in automotive, industrial power supplies, and motor control systems. The part is supplied in a Tape & Reel (TR) package.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V |
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