IRFR3911TRPBF
MOSFET N-CH 100V 14A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the HEXFET® IRFR3911TRPBF, an N-channel power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 14A (Tc) at 25°C. With a low on-resistance of 115mOhm maximum at 8.4A and 10V gate drive, it minimizes conduction losses. The IRFR3911TRPBF offers a maximum power dissipation of 56W (Tc) and is housed in a TO-252AA (DPAK) surface-mount package, facilitating efficient thermal management. Key parameters include a gate charge of 32 nC (max) at 10V and input capacitance of 740 pF (max) at 25V. This component is suitable for use in power supply, automotive, and industrial automation sectors. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |