IRFR3910TRR
MOSFET N-CH 100V 16A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3910TRR is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 16A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 115mOhm maximum at 10A, 10V, facilitating reduced conduction losses. With a maximum power dissipation of 79W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. The IRFR3910TRR is packaged in a TO-252AA (DPAK) surface mount configuration, supplied on tape and reel. Key parameters include a gate charge (Qg) of 44 nC maximum at 10V and input capacitance (Ciss) of 640 pF maximum at 25V. This MOSFET finds application in areas such as automotive systems and industrial power supplies.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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