IRFR3910PBF
MOSFET N-CH 100V 16A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3910PBF is a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 16A at 25°C (Tc), with a maximum power dissipation of 79W (Tc). The device exhibits a low on-resistance of 115mOhm maximum at 10A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 44 nC maximum at 10V and input capacitance (Ciss) of 640 pF maximum at 25V. The IRFR3910PBF utilizes a TO-252AA (DPAK) surface mount package, facilitating efficient thermal management and board space utilization. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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