IRFR3910CPBF
MOSFET N-CH 100V 16A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3910CPBF is an N-Channel power MOSFET with a 100V drain-source voltage (Vdss). This component features a continuous drain current (Id) of 16A at 25°C (Tc) and a maximum power dissipation of 79W (Tc). The Rds(On) is specified at 115mOhm maximum at 10A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 44 nC maximum at 10V Vgs and input capacitance (Ciss) of 640 pF maximum at 25V Vds. The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is 4V maximum at 250µA. Mounted via surface mount in a TO-252AA (DPAK) package, this MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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