IRFR3806PBF
MOSFET N-CH 60V 43A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3806PBF is a N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 43A at 25°C (Tc), with a maximum power dissipation of 71W (Tc). The ON-resistance (Rds On) is specified at a maximum of 15.8mOhm at 25A and 10V gate drive. Key parameters include a gate charge (Qg) of 30 nC (max) at 10V and input capacitance (Ciss) of 1150 pF (max) at 50V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-252AA (DPAK) surface-mount package. This MOSFET is suitable for use in automotive, industrial power control, and high-efficiency power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 50 V |