IRFR3711ZTRRPBF
MOSFET N-CH 20V 93A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3711ZTRRPBF is an N-Channel Power MOSFET designed for high-current switching applications. This device features a low on-resistance of 5.7mOhm at 15A and 10V Vgs, enabling efficient power delivery. With a Drain-Source Voltage (Vdss) of 20V and a continuous drain current capability of 93A (Tc), it is well-suited for power management solutions in automotive, industrial, and telecommunications sectors. The IRFR3711ZTRRPBF utilizes advanced trench technology for optimal performance and is packaged in a TO-252AA (DPAK) surface-mount configuration for ease of integration. Its operating temperature range of -55°C to 175°C (TJ) ensures reliability across demanding environments. Key electrical parameters include a Gate Charge (Qg) of 27 nC at 4.5V and Input Capacitance (Ciss) of 2160 pF at 10V. This component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 10 V |
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